Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
- 15 April 2002
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 41 (Part 2, No) , L435-L436
- https://doi.org/10.1143/jjap.41.l435
Abstract
Using low defect density n+-Al0.4Ga0.6N buffer layers we fabricated AlGaN p-n junction light emitting diodes over sapphire substrates with peak emission at 285 nm. Powers as high as 0.15 mW were measured at 400 mA pulse pumping.Keywords
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