Carbon-vacancy related defects in 4H- and 6H-SiC
- 30 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 202-206
- https://doi.org/10.1016/s0921-5107(98)00502-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-ElectronsMaterials Science Forum, 1998
- Point defects in silicon carbidePhysica B: Condensed Matter, 1993
- Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protonsJournal of Electronic Materials, 1992
- Radiation induced defects in CVD-grown 3C-SiCIEEE Transactions on Nuclear Science, 1990