An InGaAs/GaAs MQW optical switch based on field-induced waveguides
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (7) , 828-830
- https://doi.org/10.1109/68.311468
Abstract
A novel optical waveguide switch containing InGaAs/GaAs multiple-quantum wells (MQW) is proposed. In this structure, a large field-induced refractive index increase (0.1%) due to the quantum-confined Stark effect (QCSE) is utilized to generate electrically controllable waveguides. Switching operation of a first fabricated device has been investigated at wavelengths of about 1 /spl mu/m. A crosstalk ratio of -18.8 dB and an extinction ratio of 20.9 dB was achieved at a reverse voltage of -7 V. Within an operational wavelength region of 9 nm, crosstalk was found to be less than -13 dB for both switching conditions. Further, the proposed switch structure seems to be well suited for monolithic integration with laser diodes and exhibits the potential for high-speed operation.Keywords
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