Organic field-effect bipolar transistors
- 19 February 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (8) , 1108-1110
- https://doi.org/10.1063/1.115728
Abstract
Organic field-effect transistors (FETs) which employ two carefully selected active materials can function as n channel, p channel, or both n- and p-channel devices. It is shown that under an appropriate set of bias conditions the channel current in FETs with α-hexathienylene (α-6T) and C60 active layers consist of electron and hole components that are injected from the source and drain contacts into the C60 and α-6T layers, respectively.Keywords
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