Preparation of wide band gap microcrystalline silicon film by using SiH2Cl2
- 19 August 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (8) , 1131-1133
- https://doi.org/10.1063/1.117081
Abstract
We have studied the growth of Cl incorporated microcrystalline silicon [μc‐Si(:Cl)]. The flow rates of H2 and SiH2Cl2 were varied to deposit wide band gap n+ μc‐Si(:Cl) films by using SiH4/SiH2Cl2/H2/PH3 mixtures. The n+ μc‐Si(:Cl) film deposited with SiH2Cl2/SiH4 = 1 exhibited a room temperature conductivity of 2 S/cm and an optical band gap of ∼2.0 eV that is at least 0.2 eV higher than that of conventional n+ μc‐Si. The surface morphology of the μc‐Si(:Cl) film is much rougher than that of conventional μc‐Si prepared by using SiH4/H2 plasma.Keywords
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