The Calculation of Space-charge Layer Widths, Maximum Field and Junction Capacitance of p-n Junctions with Arbitrary Impurity Profiles†
- 1 January 1962
- journal article
- electronics section
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 12 (1) , 31-47
- https://doi.org/10.1080/00207216208937354
Abstract
A semi-graphical method of space-charge layer width computation is described which enables the determination of space-charge layer penetrations to both sides of the metallurgical junction, and of the maximum junction field, as a function of potential difference to be carried out for junctions of any profile. Illustrative examples comprising step and linearly graded junctions, exponential, errer function and ‘ step-error function’ profiles are given.Keywords
This publication has 2 references indexed in Scilit:
- Potential Distribution and Capacitance of a Graded p-n JunctionBell System Technical Journal, 1960
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949