GaAs-AlAs low-voltage refractive modulator operating at 1.06 μm
- 20 August 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (8) , 744-746
- https://doi.org/10.1063/1.103432
Abstract
We have produced a nonabsorbing surface‐normal optical modulator operating at 1.06 μm (e.g., for a high‐power Nd‐YAG pump laser) which has a relative transmission change of 16% for −1 to 1 voltage swing. The structure is a GaAs‐AlAs dielectric mirror with alternating n‐ and p‐type δ doping at each interface. Doping selective contacts are made to the sample so that an applied voltage appears equally across each period of the device, yielding a strong field which changes the index of the GaAs and hence shifts the mirror.Keywords
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