Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 741-746
- https://doi.org/10.1016/0022-0248(91)91073-j
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Optimal GaAs(100) substrate terminations for heteroepitaxyApplied Physics Letters, 1991
- Structure of the ZnSe/GaAs heteroepitaxial interfaceApplied Physics Letters, 1990
- Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructuresApplied Physics Letters, 1990
- Single quantum well photoluminescence in ZnSe/GaAs/AlGaAs grown by migration-enhanced epitaxyApplied Physics Letters, 1989
- Low interface state density at an epitaxial ZnSe/epitaxial GaAs interfaceApplied Physics Letters, 1989
- ZnSe/GaAs Heterointerface Stabilization by High-Temperature Se Treatment of GaAs SurfaceJapanese Journal of Applied Physics, 1988
- Structural characterization of GaAs/ZnSe interfacesJournal of Vacuum Science & Technology B, 1988
- ZnSe– and Se–GaAs interfacesJournal of Vacuum Science & Technology A, 1985
- Summary Abstract: Dipole driven diffusion across polar heterojunction interfacesJournal of Vacuum Science & Technology B, 1983
- Polar heterojunction interfacesPhysical Review B, 1978