IR-induced transients of photoluminescence and photoconductivity in a-Si:H
- 1 January 1984
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 120 (1) , 125-132
- https://doi.org/10.1063/1.34729
Abstract
We report on a study of transients of photoluminescence (PL) and photocurrent (PC) of a‐Si:H‐films which arise when at low temperature (10–110 K) the samples are excited by 1.92 eV‐photons and are illuminated after a dark period t D with IR‐light (hν<0.7 eV). We associate these transients with the photo‐excitation of electrons and holes which are trapped in the band tails with long lifetimes. By variation of t D and by comparison with the long time decay of the residual light induced ESR, the recombination of the metastable trap population is studied in differently doped films. The results indicate that below 80 K recombination proceeds by tunneling processes.Keywords
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