Evidence for solid-phase migration of Si atoms in laser-irradiated, Si+-implanted SiO2
- 14 August 1989
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (32) , 5521-5525
- https://doi.org/10.1088/0953-8984/1/32/022
Abstract
The authors measured ESR spectra of Si+-implanted SiO2 before and after laser irradiation, which causes re-emission of Si atoms. It is found that no change is induced in the concentration of the E1-centres even after most implanted Si atoms are depleted. The results indicate that the energy absorbed in Si embedded in SiO2 is not transferred into significantly to the SiO2 lattice and that the re-emission is caused by migration of Si atoms in the solid phase of SiO2.Keywords
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