Summary Abstract: Influence of interface quality on the Schottky barrier height in the epitaxial Ni-silicide/Si(111) system
- 1 July 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (4) , 1190-1191
- https://doi.org/10.1116/1.583037
Abstract
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