The sign of the Hall effect in amorphous silicon
- 1 January 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 63 (1) , 3-5
- https://doi.org/10.1080/01418639108224426
Abstract
It is shown that the anomaly in the sign of the Hall coefficient in a-Si: H can be understood if the disorder responsible for the mobility edge is caused by the presence of stretched bonds.Keywords
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