Thermal stability of the carbon-carbon bond in Ethylene adsorbed on Si(100): An isotopic mixing study
- 3 May 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 231 (3) , 289-296
- https://doi.org/10.1016/0039-6028(90)90197-g
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A multipurpose quadrupole mass spectrometer detector for surface kinetic and absolute surface coverage measurementsJournal of Vacuum Science & Technology A, 1989
- X-ray photoelectron spectroscopy study of Si-C film growth by chemical vapor deposition of ethylene on Si(100)Journal of Applied Physics, 1989
- Capillary array dosing and angular desorption distribution measurements: A general formalismJournal of Vacuum Science & Technology A, 1988
- Kinetics and energetics of oxygen adsorption on Pt(111) and Pt(112)- A comparison of flat and stepped surfacesSurface Science, 1988
- The adsorbed states of ethylene on Si(100)c(4×2), Si(100)(2×1), and vicinal Si(100) 9°: Electron energy loss spectroscopy and low-energy electron diffraction studiesThe Journal of Chemical Physics, 1987
- Methods in semiconductor surface chemistryJournal of Vacuum Science & Technology A, 1987
- Studies of SiC formation on Si (100) by chemical vapor depositionJournal of Applied Physics, 1985
- Digital temperature programmer for isothermal and thermal desorption measurementsReview of Scientific Instruments, 1985
- Design considerations for simple gas dosers in surface science applicationsJournal of Vacuum Science & Technology A, 1985
- Isotopic Mixing in Nitrogen Chemisorbed on WThe Journal of Chemical Physics, 1965