Determination of nonuniform diffusion length and electric field in semiconductors

Abstract
A method is proposed that purports to measure the non-uniform diffusion lengthL(x)in the presence of an arbitrary electric fieldE_{x}(x). A point source of carrier generation (as a model for an electron beam) scans across the sample in the thickness direction x while the induced currents are measured at two reverse-biased junctions sandwiching the sample.L(x)and(E_{x} \micro_{p} + D_{p})/D_{p}can be deduced from the currents. If only one collecting junction is present, one of the two functions may be deduced provided that the other is known; in addition, the surface recombination velocity at the other boundary may be determined in the presence of arbitraryL(x)andE_{x}(x). With additional scanning in theyandzdirections, quasi three-dimensional mapping is possible.

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