High sensitivity Hall plates using epitaxial GaAs

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Abstract
The increased use of Hall effect devices in industry and research has led to the search for new materials for their fabrication. The important requirements are stable operation of the transducer over a wide temperature range, higher sensitivity and better linearity of the Hall output against magnetic field. Hall plates of epitaxial GaAs with carrier concentration in the range 1015-1016 cm−3 were made and their properties studied. It is shown that the measured open circuit sensitivity of these plates is in the range of 30-800 V A−1 kG−1, depending upon the carrier concentration and thickness of the epitaxial layer used, and is greater than commercially available Hall plates of InSb, InAs and InAsP. The temperature coefficient of the Hall output VH is of the order of -007% per °C and compares favourably with the commercial plates. The linearity of the Hall output under open circuit conditions and against magnetic field is 2%. The large Hall outputs available for moderate fields from epitaxial GaAs Hall plates will find many applications where InSb, InAs and InAsP Hall plates have hitherto proved unsuitable.

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