New resistivity for high-mobility quantum Hall conductors

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Abstract
We present measurements showing dramatic nonlocal behavior in the four-terminal resistances of a high-mobility quantum Hall conductor. These measurements illustrate that the standard definition of the resistivity tensor is inappropriate, but they are in excellent agreement with a new model of the conductor that treats the edge and bulk conducting pathways independently. This model uses a single intensive parameter, analogous to a local resistivity for the bulk channel only, to characterize the system.