Growth and characterization of ZnSe on (NH4) 2Sx-treated GaAs substrates: effect of GaAs surface microstructure on the growth rate of ZnSe
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 757-761
- https://doi.org/10.1016/0022-0248(91)91076-m
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology (01604011, 02204011)
This publication has 7 references indexed in Scilit:
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- Surface reconstruction and stabilization in MOMBE of ZnSe revealed by in-situ RHEED monitoringJournal of Crystal Growth, 1990
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH4)2Sx SolutionJapanese Journal of Applied Physics, 1990
- Investigations of ammonium sulfide surface treatments on GaAsJournal of Vacuum Science & Technology B, 1989
- Reflection high-energy electron diffraction and x-ray photoelectron spectroscopic study on (NH4)2Sx-treated GaAs (100) surfacesApplied Physics Letters, 1989
- Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEEDJapanese Journal of Applied Physics, 1989