Temperature dependence of ferroelectric properties of SrBi2Ta2O9 thin films
- 1 September 1997
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 17 (1-4) , 57-65
- https://doi.org/10.1080/10584589708012981
Abstract
Temperature dependence of ferroelectric properties was studied on SrBi2Ta2O9 thin films with stoichiometric composition and Sr deficient and/or Bi excess compositions. Decreasing rate of remanent polarization Pr with increasing temperature was fairly small for the 20% Sr deficient compositions compared to the stoichiometric Sr content compositions. The large Pr decrease for the stoichiometric compositions was attributed to the increase of fast polarization relaxation with increasing temperature. Fatigue-free property was confirmed even at 150 °C for all compositions.Keywords
This publication has 5 references indexed in Scilit:
- Sr content dependence of ferroelectric properties in srbi2ta2o9 thin filmsIntegrated Ferroelectrics, 1997
- Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process TemperatureJapanese Journal of Applied Physics, 1996
- Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applicationsApplied Physics Letters, 1996
- Structural and Ferroelectric Properties of SrBi2Ta2O9 Thin FilmsMRS Proceedings, 1994
- A family of ferroelectric bismuth compoundsJournal of Physics and Chemistry of Solids, 1962