On the photoionization spectra of quantum wells
- 1 April 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (7) , 3323-3325
- https://doi.org/10.1063/1.364318
Abstract
The influence of the depolarization and exciton-like effect on the photoionization spectra of n-type quantum wells is studied theoretically employing the local density approximation. A critical discussion of the results obtained by other authors is given. Numerical examples for GaAs/AlGaAs and Si/SiGequantum wells are presented.This publication has 13 references indexed in Scilit:
- Quantum-well infrared photodetectorsJournal of Applied Physics, 1993
- The theory of the photoabsorption in n-type Si-SiGe quantum well infrared photodetectorsJournal of Applied Physics, 1993
- The theory of multiple quantum-well GaAs-AlGaAs infrared detectorsInfrared Physics, 1992
- Bound-free intraband absorption line shape in quantum-well structuresSolid State Communications, 1991
- Performance aspects of a quantum-well detectorJournal of Applied Physics, 1988
- Notes on crystal optics of superlatticesSolid State Communications, 1985
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- On the absorption of infrared radiation by electrons in semiconductor inversion layersSolid State Communications, 1976
- The interface EM modes of a “surface quantized” plasma layer on a semiconductor surfaceSurface Science, 1976
- Quantum transport in an anisotropic two-dimensional system under strong magnetic fieldsZeitschrift für Physik B Condensed Matter, 1976