Noise performance of microwave GaAs f.e.t. amplifiers at low temperatures
- 6 January 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (1) , 10-11
- https://doi.org/10.1049/el:19770008
Abstract
4 GHz measurements have been made of the noise temperature of Bell Laboratories microwave GaAs f.e.t. amplifiers cooled to liquid-nitrogen temperatures (78 K). An optimum noise temperature of about 30 K (0.4 dB noise figure) was obtained, compared with the room-temperature value of 152 K (1.8 dB).Keywords
This publication has 1 reference indexed in Scilit:
- Cryogenically Cooled GaAs FET Amplifier with a 1.1-dB Noise Figure at 5.0 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005