High-speed response characteristics of GaAs optoelectronic integrated receivers
- 24 April 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (9) , 501-502
- https://doi.org/10.1049/el:19860340
Abstract
The letter focuses on the measurement of pulse response characteristics of an optoelectronic integrated receiver in which a GaAs metal-semiconductor-metal (MSM) photodiode and a GaAs field-effect transistor amplifier are monolithically integrated on a GaAs substrate. The maximum parasitic capacitance was found to be negligible for the total capacitance at the amplifier input. We also verified a fast response of this receiver showing a rise time of 300 ps.Keywords
This publication has 0 references indexed in Scilit: