ELECTRONIC PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW DISCHARGE PLASMA

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Abstract
The properties of glow discharge µc Si have been investigated by conductivity, Hall effect and field effect measurements as a function of crystallite size and phosphorus doping ratio. It is concluded that the large increase in σ over a-Si is almost entirely caused by an increased carrier density resulting from delocalised electron tail states. The sign of the Hall constant remains normal down to an extrapolated crystallite size of about 20A

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