Radiance saturation in small-area GaInAsP/InP and GaAlAs/GaAs LED's
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (4) , 365-371
- https://doi.org/10.1109/T-ED.1981.20347
Abstract
The radiance/current relationship for small-area surface emitting LED's has been found to saturate at high current densities between 30 and 1000 kA/cm2in the various GaAlAs and GaInAsP devices investigated. An important saturation mechanism is found to be due to superluminescence in the plane of the active layer. Auger recombination and carrier leakage from the active region are generally of secondary importance in causing the saturation.Keywords
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