Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diode
- 31 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (16) , 1386-1387
- https://doi.org/10.1049/el:19970935
Abstract
A lattice-matched GaInNAs/GaAs double-heterostructure laser diode has been developed by metal organic chemical vapour deposition using dimethylhydrazine as a nitrogen source. Lasing at 1.3 µm at room-temperature under pulsed operation is demonstrated.Keywords
This publication has 3 references indexed in Scilit:
- Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Room-temperature continuous-wave operation of GaInNAs/GaAslaser diodeElectronics Letters, 1996
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996