Computer analysis of breakdown mechanism in planar power MOSFET's
- 1 February 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (2) , 399-400
- https://doi.org/10.1109/T-ED.1980.19874
Abstract
Breakdown mechanism in planar power MOSFET's having high breakdown voltage is investigated. Precise electric field distribution is obtained by two-dimensional numerical analysis. This field distribution is used to optimize device structure and to predict breakdown voltage. A technique for reducing the electric field on the silicon surface by equalizing its distribution is presented.Keywords
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