Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

• 1 December 1997
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 258-263, 1143-1148
• https://doi.org/10.4028/www.scientific.net/msf.258-263.1143

Abstract

Keywords

• GALLIUM NITRIDE (GAN)
• IRRADIATION
• LUMINESCENCE
• NATIVE DEFECTS