OPTICAL LIMITING IN SEMICONDUCTORS
- 15 September 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (6) , 164-166
- https://doi.org/10.1063/1.1652951
Abstract
The nonlinear absorption coefficients of Si from 146 to 452°K and of CdSe, CdTe, and GaAs at 300°K were measured with a Nd:YAlG Q‐switched laser. The reported stepwise nature of nonlinear absorption for Si is confirmed, but the assignment of a three‐photon process is uncertain. As an optical limiter, the optimum Si thickness to be inserted within a Nd:laser cavity is discussed.Keywords
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