Thermodynamic analysis of the deposition of (Ga, Al)As epitaxial layers prepared by the MOCVD technique
- 1 January 1991
- journal article
- Published by Institute of Organic Chemistry & Biochemistry in Collection of Czechoslovak Chemical Communications
- Vol. 56 (4) , 865-873
- https://doi.org/10.1135/cccc19910865
Abstract
Based on a detailed thermodynamic analysis of the Ga-Al-As-C-H system, starting conditions were determined under with the reaction of trimethylgallium, trimethylaluminium and arsine in hydrogen results in the formation of a single condensed phase, viz. solid (Ga, Al)As. At initial ratios BV/AIII < 1, liquid Ga-Al-As and solid Al4C3 are also formed. At high initial concentrations of the AIII-element alkyl derivatives, solid graphite also emerges, particularly at elevated temperatures and reduced pressures. The calculated composition of the solid (Ga, Al)As is compared with experimental data.Keywords
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