Hall effect and electronic structure in Ni-based amorphous alloys

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Abstract
The Hall resistivities of two amorphous Ni100-xPx alloys (x=20 and 24) and an Ni80P14B6 alloy have been measured at 77K and at room temperature. The normal Hall coefficient R0 is independent of temperature (77-300K), negative and its absolute value slowly decreases with increasing P content. The decrease in R0 is probably due to an increase in the number of conducting electrons. For the alloys with the highest P content (d band completely full) R0 is due to nearly free s-like electrons and the electron number density deduced from R0 can be combined with the plasmon frequency results to obtain the effective mass ratio.