ATOMIC STRUCTURE OF INTERFACES IN GaAs/Ga1-xAlxAs SUPERLATTICES

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Abstract
The free exciton photoluminescence linewidth depends on the distribution and size of the interfacial growth islands. Therefore one sees that the dermination of the atomic structure of the interfaces is greatly needed. We have shown previously that it was possible to visualize atomic steps at the GaAs/AlAs interfaces of MBE grown superlattices along [110] orientation. This paper considers whether it is possible to complete this information by considering the contrast obtained with other orientations on the one hand and with the binary/ternary interfaces on the other hand

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