Near infrared avalanche photodetectors have been constructed by wafer fusing epitaxial layers of InGaAs to Si. This integration combines the light absorption properties of InGaAs with the avalanche multiplication properties of Si. We concentrate here on two of the advantages these detectors have: desirable gain sensitivity properties, and high gain- bandwidth-products which would make them ideal for optical communication applications. Measurements are shown that illustrate very gradual gain increases with increasing device voltages as well as gain-bandwidth-products of over 300 GHz.