Low-Threshold Patterned quantum well lasers grown by molecular beam epitaxy

4 August 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (16) , 985-986
https://doi.org/10.1049/el:19880670

Abstract

GaAs/AlGaAs patterned quantum well lasers were grown by molecular beam epitaxy on grooved substrates. The carrier confinement and the real-index waveguiding in these lasers rely on lateral thickness variations in the quantum well active layer. Very low threshold currents, as low as l.8mA for uncoated devices at room temperature, with 63% differential efficiency have been obtained.

Keywords

SEMICONDUCTORS
PATTERNED QUANTUM WELL LASERS
REAL-INDEX WAVEGUIDING
CARRIER CONFINEMENT
MBE
GROOVED SUBSTRATES
63 PERCENT
MOLECULAR BEAM EPITAXY
LATERAL THICKNESS VARIATIONS
UNCOATED DEVICES
1.8 MA
DIFFERENTIAL EFFICIENCY
LOW THRESHOLD CURRENTS
GAAS-ALGAAS

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