Transverse beam deflection in a semiconductor laser
- 11 September 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (19) , 974-975
- https://doi.org/10.1049/el:19860666
Abstract
Switching of a radiation beam of a semiconductor laser in the direction perpendicular to the active layers is realised. The laser has two active layers which are controlled individually and are optically coupled to each other. The far-field peak moves vertically from −2° (downward) to 10° (upward) off the facet normal. An analysis of the beam deflection is also given.Keywords
This publication has 1 reference indexed in Scilit:
- HETEROSTRUCTURE MATERIALSPublished by Elsevier ,1978