Short-channel effects in 0.5-µm source-drain spaced vertical GaAs FET's—A first experimental investigation

1 April 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (4) , 125-127
https://doi.org/10.1109/EDL.1983.25672

Abstract

The output characteristics of vertical GaAs MESFET's with a 0.5 µm source-drain spacing are discussed. It is found that the measured pinch-off voltage is substantially larger than the one expected from the geometrical Schottky diode pinch-off, and current limiting surface depletion effects are not observed.

Keywords

GALLIUM ARSENIDE
DOPING
MESFETS
ELECTRONS
FETS
CURRENT MEASUREMENT
VOLTAGE MEASUREMENT
SCHOTTKY DIODES
CURRENT LIMITERS
ELECTRODES

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