Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS-transistors

• 1 November 1996
• journal article
• Published by Elsevier in Microelectronics Reliability
• Vol. 36  (11-12) , 1743-1746
• https://doi.org/10.1016/0026-2714(96)00188-6

Abstract

Keywords

• CONFORMING
• RISETIME
• FAILURE THRESHOLDS
• TRANSISTORS
• MODEL
• PULSES
• GGNMOS
• 0.8ΜM