Characterization of p-type Hg 1_x Cd x Te by infrared reflectance

Abstract
An optical reflectance method is utilized to determine the effective acceptor concentra-tion of p-type Hgl_xCdxTe (o.2≤ x≤ 0.3). This method is based on the analysis of the spectral reflectance in the plasmon-phonon region of the samples at room temperature, and is capable of determining acceptor densities as low as 5.1015 cm-3. Experimental results of p-type bulk crystals and of p-type layers on n-type bulk crystals are presented, and the prac-tical limits of the method are discussed.

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