The electronic characteristics of n-type CdIn2Te4
- 15 January 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (2) , 355-358
- https://doi.org/10.1063/1.334814
Abstract
The elecstronic properties of n‐type CdIn2Te4 crystals were investigated. The mobility and carrier concentration were measured using Hall techniques. I‐V and C‐V measurements were performed on Al/n‐CdIn2Te4 Schottky barrier devices. The I‐V data are interpreted in terms of space‐charge‐limited currents. The dominant electron trap level has been determined to be 0.21 eV below the conduction band. The barrier height was found to be approximately 0.65 eV.This publication has 3 references indexed in Scilit:
- The defect structure of CdTeRevue de Physique Appliquée, 1977
- Zone Leveling and Crystal Growth of Peritectic CompoundsJournal of Applied Physics, 1961
- Untersuchungen über ternäre Chalkogenide. VI. Über Ternäre Chalkogenide des Aluminiums, Galliums und Indiums mit Zink, Cadmium und QuecksilberZeitschrift für anorganische und allgemeine Chemie, 1955