Low-frequency multiplication noise in reference diodes for small multiplication factors
- 4 August 1977
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (16) , 468-470
- https://doi.org/10.1049/el:19770338
Abstract
An analysis of the current dependence of multiplication noise for small multiplication factors (M < 103) is given, including the generation component of the reverse current and the position dependence of the ionisation coefficient of electrons (and holes) in the diode depletion region. Results are given for abrupt Si p–n junctions.Keywords
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