Chemical vapor deposition of CoGa and PtGa2 thin films from mixed-metalorganometallic compounds
- 25 December 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (26) , 2760-2762
- https://doi.org/10.1063/1.102370
Abstract
A new process for deposition of thin metal films from organometallic precursors of limited volatility has been demonstrated. Short path vapor transport of the complexes dichloro(tetracarbonylcobalt)gallium(III) tetrahydrofuranate, (CO)4CoGaCl2(THF), or platinum(bis‐dimethylglyoximato)(bis‐dimethylgallium), Pt{(N2C2(CH3)2O2)(GaMe2)}2, each under a stream of hydrogen, leads to the films of the intermetallic compounds CoGa and PtGa2, respectively, on substrates such as Si (100) wafer or a glass slide at 500 °C. The compounds were identified and characterized by x‐ray diffraction, Auger electron and x‐ray photoelectron spectroscopies. The films are crystalline and highly reflective. The CoGa film is single phased; the PtGa2 film shows a minor constituent of Pt2Ga3.Keywords
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