Emission from the (1,1,0) face of negative-electron affinity gallium arsenide
- 11 January 1976
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 9 (1) , L5-L7
- https://doi.org/10.1088/0022-3727/9/1/002
Abstract
The transmission probability for electrons incident on the (1,1,0) face of GaAs activated to negative electron affinity has been calculated for electrons at the same energy within the X and Gamma minima. The two transmission probabilities obtained are found to be both fairly small, suggesting that multiple reflection within the surface space charge region plays an important role in this system.Keywords
This publication has 3 references indexed in Scilit:
- A study of emission from the (1,1,1) faces of GaAs negative electron affinity photoemittersJournal of Physics D: Applied Physics, 1976
- Emission of X electrons from (110) GaAs activated to negative electron affinityJournal of Physics D: Applied Physics, 1975
- Transport Properties of GaAs Obtained from Photoemission MeasurementsPhysical Review B, 1969