Binding to Isoelectronic Impurities in Semiconductors
- 17 January 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 28 (3) , 171-174
- https://doi.org/10.1103/physrevlett.28.171
Abstract
The potential produced by isoelectronic impurities is investigated and shown to be critically dependent upon screening. Two methods of calculation of the screened potential are used in this paper, one based on a first-principles wave-function approach and the other using the semiempirical theory of energy bands in semiconductors. The relaxation of the host crystal is also taken into account and shown to be important. The results are in satisfactory agreement with experiment.Keywords
This publication has 9 references indexed in Scilit:
- Pseudopotential Calculations of Electronic Charge Densities in Seven SemiconductorsPhysical Review B, 1971
- Volume Dependence of the Spin-Orbit Splitting in Representative Semiconductors from High-Pressure Electroreflectivity Measurements and Relativistic Orthogonalized-Plane-Wave CalculationsPhysical Review B, 1971
- Ionicity of the Chemical Bond in CrystalsReviews of Modern Physics, 1970
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition EnergiesPhysical Review B, 1969
- Cancelation Theorem for Isoelectronic Impurity Binding EnergiesPhysical Review Letters, 1969
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- The spin-orbit interaction in metals and semiconductorsPhilosophical Magazine, 1966
- Wave-Number-Dependent Dielectric Function of SemiconductorsPhysical Review B, 1962