Low threshold current operation of vapour-grown 650 nm-band InGaAsP/InGaP DH lasers

17 January 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (2) , 54-56
https://doi.org/10.1049/el:19850038

Abstract

InGaAsP/InGaP double heterojunction lasers emitting in the 650 nm band have been fabricated on GaAs_0.61P_0.39 substrates by hydride vapour-phase epitaxy. By optimising growth conditions and device structure, a threshold current density as low as 5.6 kA/cm² is obtained, and CW operation is achieved up to −27° C.

Keywords

THRESHOLD CURRENT DENSITY
HYDRIDE VAPOUR-PHASE EPITAXY
650 NM BAND
GAAS0.61P0.39 SUBSTRATES
INGAASP/INGAP DOUBLE HETEROJUNCTION LASERS
SEMICONDUCTOR LASER
GROWTH CONDITIONS
CW OPERATION