X-band self-aligned gate enhancement-mode InP MISFET's
- 1 July 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (7) , 811-815
- https://doi.org/10.1109/t-ed.1983.21214
Abstract
Self-aligned gate enhancement-mode InP/SiO2MISFET's with ∼0.8-µm channel length were successfully fabricated on an Fe-doped semi-insulating substrate. The fabricated MISFET's exhibited very high transconductance, as high as 200 mS/mm, and goodX-band operation, especially marked high-power-output characteristics. The minimum noise figure at 4 GHz was 1.87 dB with 10.0-dB associated gain. 1.17 W/mm and 1.0 W/mm power outputs were obtained at 6.5 and 11.5 GHz, respectively. 43.5-percent maximum power-added efficiency was attained at 6.5 GHz.Keywords
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