A 1kw /sub peak/, 300 W /sub avg/ IMPATT Diode Injection Locked Oscillator
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 82 (0149645X) , 126-128
- https://doi.org/10.1109/mwsym.1982.1130634
Abstract
Design procedures were developed for and applied to a circularly cylindrical resonant cavity combiner (CCRCC) operating in the TM /sub 020/ mode. Thirty-two (32) GaAs double-drift IMPATT diodes were power combined in such a structure yielding 313 watts average and 1043 watts peak at X-Band.Keywords
This publication has 3 references indexed in Scilit:
- Power combining of X-band IMPATT circuit modulesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- The Single-Cavity Multiple-Device OscillatorIEEE Transactions on Microwave Theory and Techniques, 1971
- An X-band 10-watt multiple-IMPATT oscillatorProceedings of the IEEE, 1971