An analytical model for the narrow-width effect in ion-implanted MOSFETs
- 31 July 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (7) , 639-649
- https://doi.org/10.1016/0038-1101(84)90134-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Threshold voltage of a narrow-width MOSFETElectronics Letters, 1981
- Electrographic development: An electrostatic calculationJournal of Applied Physics, 1980
- Ion-implanted threshold tailoring for insulated gate field-effect transistorsIEEE Transactions on Electron Devices, 1977
- Threshold voltage of narrow channel field effect transistorsSolid-State Electronics, 1976
- Influence of the channel width on the threshold voltage modulation in m.o.s.f.e.t.sElectronics Letters, 1975
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974