SOLUTE STRIATIONS IN CZOCHRALSKI-GROWN SILICON CRYSTALS: EFFECT OF CRYSTAL ROTATION AND GROWTH RATES
- 15 September 1963
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (6) , 100-102
- https://doi.org/10.1063/1.1753883
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect JunctionsJournal of Applied Physics, 1963
- Minute Resistivity Variations in Germanium Crystals and Their Effect on DevicesJournal of the Electrochemical Society, 1962
- Impurity Striations in Unrotated Crystals of InSbJournal of Applied Physics, 1961
- Detection of Growth Striations in Germanium CrystalsJournal of Applied Physics, 1960
- Cross-sectional resistivity variations in germanium single crystalsSolid-State Electronics, 1960
- LIQUID–SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHODCanadian Journal of Physics, 1960
- Resistivity Striations in Germanium CrystalsJournal of Applied Physics, 1954