Origin of the interface dipole at interfaces between undoped organic semiconductors and metals
- 1 July 2005
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 23 (4) , 1072-1077
- https://doi.org/10.1116/1.1885021
Abstract
Interfaces between metals and intrinsic organic semiconductors are often characterized by the presence of a relatively large interface dipole confined to a narrow interfacial layer. Different potential contributions to this interface dipole are discussed.Keywords
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