Deep Levels Associated with Oxygen Precipitation in CZ Silicon and Correlation with Minority Carrier Lifetimes
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The analysis of exponential and nonexponential transients in deep-level transient spectroscopyJournal of Applied Physics, 1981
- Octahedral precipitates in high temperature annealed Czochralski-grown siliconJournal of Crystal Growth, 1981
- Defect states associated with dislocations in siliconApplied Physics Letters, 1979
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- Physics of Semiconductor DevicesPhysics Today, 1970