Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs

• 31 July 1995
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 67  (5) , 688-690
• https://doi.org/10.1063/1.115204

Abstract

Keywords

• GALLIUM ARSENIDES
• NITROGEN ADDITIONS
• CRYSTAL DOPING
• MOLECULAR BEAM EPITAXY
• PHOTOLUMINESCENCE
• LINE WIDTHS
• EXCITONS
• TRAPS