Focused ion beam induced deposition and ion milling as a function of angle of ion incidence

Abstract
In the repair of integrated circuits, and x‐ray masks focused ion beam induced deposition, and ion milling often have to be performed over quite nonplanar topography. Thus, the milling and the deposition as a function of the angle of ion incidence are important. The milling yield of Si, SiO2, Au, and W versus angle of incidence using 25 keV Ga+ ions has been measured. In qualitative agreement with simulations, the yield rises with angle and then falls as grazing incidence is approached. Deposition yield versus angle was measured using dimethylgold hexafluoro‐acetylacetonate and W(CO)6 as the precursor gases. The measurements were carried out using cylindrical quartz fibers 30–50 μm in diameter which automatically provide angles of incidence from 0° to 90° or on planar surfaces at various angles. Rippling of the deposited material is observed at angles of incidence greater than 50°.

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